دورية أكاديمية
Effects of gate notching profile defect on performance characteristics of short-channel NMOSFET with channel length of 0.12 μm
العنوان: | Effects of gate notching profile defect on performance characteristics of short-channel NMOSFET with channel length of 0.12 μm |
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المؤلفون: | Sang-Hun Seo, Won-Suk Yang, Sung-Jin Kim, Jun-Yong Ju, Joo-Young Kim, Hyun-Chul Peak, Seung-Hyun Park, Seug-Gyu Kim, Kyeong-Tae Kim |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 24(12):727-729 Dec, 2003 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/LED.2003.818836 |