دورية أكاديمية

Effects of gate notching profile defect on performance characteristics of short-channel NMOSFET with channel length of 0.12 μm

التفاصيل البيبلوغرافية
العنوان: Effects of gate notching profile defect on performance characteristics of short-channel NMOSFET with channel length of 0.12 μm
المؤلفون: Sang-Hun Seo, Won-Suk Yang, Sung-Jin Kim, Jun-Yong Ju, Joo-Young Kim, Hyun-Chul Peak, Seung-Hyun Park, Seug-Gyu Kim, Kyeong-Tae Kim
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 24(12):727-729 Dec, 2003
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:07413106
15580563
DOI:10.1109/LED.2003.818836