HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs

التفاصيل البيبلوغرافية
العنوان: HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs
المؤلفون: Yousif, M.Y.A., Johansson, M., Lundgren, P., Bengtsson, S., Sundqvist, J., Harsta, A., Radamson, H.H.
المصدر: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Solid-state device research - ESSDERC '03 European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on. :255-258 2003
Relation: ESSDERC 2003. Proceedings of the 33rd European Solid-State Device Research - ESSDERC '03
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780379993
9780780379992
DOI:10.1109/ESSDERC.2003.1256862