مؤتمر
The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing
| العنوان: | The role of pre-anneal conditions on the microstructure of Ge+ implanted Si after high temperature milli-second flash annealing |
|---|---|
| المؤلفون: | Jones, K.S., Crane, S.P., Ross, C.E., Malmborg, T., Downey, D., Arevalo, E. |
| المصدر: | Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on Ion implantation technology proceedings Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on. :76-78 2002 |
| Relation: | Proceedings of the 2002 14th International Conference on Ion Implantation Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780371550 9780780371552 |
|---|---|
| DOI: | 10.1109/IIT.2002.1257942 |