دورية أكاديمية
Improvement of dark current using InP/InGaAsP transition layer in large-area InGaAs MSM photodetectors
| العنوان: | Improvement of dark current using InP/InGaAsP transition layer in large-area InGaAs MSM photodetectors |
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| المؤلفون: | Junghwan Kim, Johnson, W.B., Kanakaraju, S., Calhoun, L.C., Lee, C.H. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(3):351-356 Mar, 2004 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2003.822276 |