مؤتمر
Highly performant double gate MOSFET realized with SON process
| العنوان: | Highly performant double gate MOSFET realized with SON process |
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| المؤلفون: | Harrison, S., Coronel, P., Leverd, F., Cerutti, R., Palla, R., Delille, D., Borel, S., Jullian, S., Pantel, R., Descombes, S., Dutartre, D., Morand, Y., Samson, M.P., Lenoble, D., Talbot, A., Villaret, A., Monfray, S., Mazoyer, P., Bustos, J., Brut, H., Cros, A., Munteanu, D., Autran, J.-L., Skotnicki, T. |
| المصدر: | IEEE International Electron Devices Meeting 2003 Electron devices IEDM'03 Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International. :18.6.1-18.6.4 2003 |
| Relation: | IEEE International Electron Devices Meeting 2003 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780378725 9780780378728 |
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| DOI: | 10.1109/IEDM.2003.1269319 |