مؤتمر
A novel leakage current separation technique in a direct tunneling regime gate oxide SONOS memory cell
| العنوان: | A novel leakage current separation technique in a direct tunneling regime gate oxide SONOS memory cell |
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| المؤلفون: | Chung, S.S., Chiang, P.-Y., Chou, G., Huang, C.-T., Chen, P., Chu, C.-H., Hsu, C.C.-H. |
| المصدر: | IEEE International Electron Devices Meeting 2003 Electron devices IEDM'03 Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International. :26.6.1-26.6.4 2003 |
| Relation: | IEEE International Electron Devices Meeting 2003 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780378725 9780780378728 |
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| DOI: | 10.1109/IEDM.2003.1269357 |