The development of dual gate poly scheme with plasma nitrided gate oxide for mobile high performance DRAMs: plasma process monitoring and the correlation with electrical results

التفاصيل البيبلوغرافية
العنوان: The development of dual gate poly scheme with plasma nitrided gate oxide for mobile high performance DRAMs: plasma process monitoring and the correlation with electrical results
المؤلفون: Hong, S.H., Jeon, T.S., Koo, B.Y., Hyun, S.J., Shin, Y.G., Chung, U.-I., Moon, J.T.
المصدر: 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Integrated circuit design and technology Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on. :219-222 2004
Relation: 2004 International Conference on Integrated Circuit Design and Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780385284
9780780385283
DOI:10.1109/ICICDT.2004.1309948