مؤتمر
The development of dual gate poly scheme with plasma nitrided gate oxide for mobile high performance DRAMs: plasma process monitoring and the correlation with electrical results
العنوان: | The development of dual gate poly scheme with plasma nitrided gate oxide for mobile high performance DRAMs: plasma process monitoring and the correlation with electrical results |
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المؤلفون: | Hong, S.H., Jeon, T.S., Koo, B.Y., Hyun, S.J., Shin, Y.G., Chung, U.-I., Moon, J.T. |
المصدر: | 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Integrated circuit design and technology Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on. :219-222 2004 |
Relation: | 2004 International Conference on Integrated Circuit Design and Technology |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780385284 9780780385283 |
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DOI: | 10.1109/ICICDT.2004.1309948 |