مؤتمر
The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design
| العنوان: | The improvement of copper interconnect electromigration resistance by cap/dielectric interface treatment and geometrical design |
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| المؤلفون: | Lin, M.H., Lin, Y.L., Chen, J.M., Tsai, C.C., Yeh, M.-S., Liu, C.C., Hsu, S., Wang, C.H., Sheng, Y.C., Chang, K.P., Su, K.C., Chang, Y.J., Tahui Wang |
| المصدر: | 2004 IEEE International Reliability Physics Symposium. Proceedings Reliability physics Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International. :229-233 2004 |
| Relation: | 2004 IEEE International Reliability Physics Symposium. Proceedings |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078038315X 9780780383159 |
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| DOI: | 10.1109/RELPHY.2004.1315328 |