An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT)

التفاصيل البيبلوغرافية
العنوان: An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT)
المؤلفون: Tokuda, N., Kaneda, M., Minato, T.
المصدر: 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on. :129-132 2004
Relation: Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:4886860605
9784886860606
DOI:10.1109/WCT.2004.239843