A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage

التفاصيل البيبلوغرافية
العنوان: A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage
المؤلفون: Seung-Chul Lee, Jin-Cherl Her, Soo-Seong Kim, Min-Woo Ha, Kwang-Seok Seo, Yearn-Ik Choi, Min-Koo Han
المصدر: 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Power semiconductor devices and ICs Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on. :319-322 2004
Relation: Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:4886860605
9784886860606
DOI:10.1109/WCT.2004.240037