MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology node

التفاصيل البيبلوغرافية
العنوان: MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology node
المؤلفون: Pidin, S., Mori, T., Nakamura, R., Saiki, T., Tanabe, R., Satoh, S., Kase, M., Hashimoto, K., Sugii, T.
المصدر: Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. VLSI technology VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on. :54-55 2004
Relation: 2004 Symposium on VLSI Technology. Digest of Technical Papers
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780382897
9780780382893
DOI:10.1109/VLSIT.2004.1345389