مؤتمر
Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation
| العنوان: | Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation |
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| المؤلفون: | Fujishiro, H.I., Mikami, N., Takei, T., Izawa, M., Moku, T., Ohtuka, K. |
| المصدر: | 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) Compound semiconductors Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on. :152-157 2003 |
| Relation: | 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386140 9780780386143 |
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| DOI: | 10.1109/ISCSPC.2003.1354447 |