On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics

التفاصيل البيبلوغرافية
العنوان: On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics
المؤلفون: Tianbing Chen, Kuo, W.-M.L., Enhai Zhao, Qingqing Liang, Zhenrong Jin, Cressler, J.D., Joseph, A.J.
المصدر: Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting. :217-220 2004
Relation: Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780386183
9780780386181
DOI:10.1109/BIPOL.2004.1365784