مؤتمر
On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics
العنوان: | On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics |
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المؤلفون: | Tianbing Chen, Kuo, W.-M.L., Enhai Zhao, Qingqing Liang, Zhenrong Jin, Cressler, J.D., Joseph, A.J. |
المصدر: | Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting. :217-220 2004 |
Relation: | Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780386183 9780780386181 |
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DOI: | 10.1109/BIPOL.2004.1365784 |