مؤتمر
230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
| العنوان: | 230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology |
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| المؤلفون: | Chevalier, P., Fellous, C., Rubaldo, L., Dutartre, D., Laurens, M., Jagueneau, T., Leverd, F., Bord, S., Richard, C., Lenoble, D., Bonnouvrier, J., Marty, M., Perrotin, A., Gloria, D., Saguin, F., Barbalat, B., Beerkens, R., Zerounian, N., Aniel, F., Chantre, A. |
| المصدر: | Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting. :225-228 2004 |
| Relation: | Proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386183 9780780386181 |
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| DOI: | 10.1109/BIPOL.2004.1365786 |