مؤتمر
N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]
| العنوان: | N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application] |
|---|---|
| المؤلفون: | Li, H.-J., Pompl, T., Young, C., Rhoad, T., Saulters, J., Peterson, J., Gardner, M., Brown, G.A., Bersuker, G., Zeitzoff, P.M., Price, J., Hung, P.Y., Diebold, A., Huff, H.R. |
| المصدر: | Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Device research conference Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]. :15-16 vol.1 2004 |
| Relation: | Device Research Conference |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780382846 9780780382848 |
|---|---|
| تدمد: | 15483770 |
| DOI: | 10.1109/DRC.2004.1367760 |