دورية أكاديمية
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers
| العنوان: | Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers |
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| المؤلفون: | Karmarkar, A.P., Bongim Jun, Fleetwood, D.M., Schrimpf, R.D., Weller, R.A., White, B.D., Brillson, L.J., Mishra, U.K. |
| المصدر: | IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 51(6):3801-3806 Dec, 2004 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189499 15581578 |
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| DOI: | 10.1109/TNS.2004.839199 |