Fabrication and operation of sub-50 nm strained-Si on Si/sub 1-x/Ge/sub x/ Insulator (SGOI) CMOSFETs

التفاصيل البيبلوغرافية
العنوان: Fabrication and operation of sub-50 nm strained-Si on Si/sub 1-x/Ge/sub x/ Insulator (SGOI) CMOSFETs
المؤلفون: Sadaka, M., Thean, A.V.-Y., Barr, A., Tekleab, D., Kalpat, S., White, T., Nguyen, T., Mora, R., Beckage, P., Jawarani, D., Zollner, S., Kottke, M., Liu, R., Canonico, M., Xie, Q.-H., Wang, X.-D., Parsons, S., Eades, D., Zavala, M., Nguyen, B.-Y., Mazure, C., Mogab, J.
المصدر: 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573) SOI conference SOI Conference, 2004. Proceedings. 2004 IEEE International. :209-211 2004
Relation: 2004 IEEE International SOI Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780384970
9780780384972
DOI:10.1109/SOI.2004.1391620