مؤتمر
Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage
| العنوان: | Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage |
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| المؤلفون: | Gusev, E.P., Cabral, C., Jr., Under, B.P., Kim, Y.H., Maitra, K., Carrier, E., Nayfeh, H., Amos, R., Biery, G., Bojarczuk, N., Callegari, A., Carruthers, R., Cohen, S.A., Copel, M., Fang, S., Frank, M., Guha, S., Gribelyuk, M., Jamison, P., Jammy, R., Ieong, M., Kedzierski, J., Kozlowski, P., Ku, K., Lacey, D., LaTulipe, D., Narayanan, V., Ng, H., Nguyen, P., Newbury, J., Paruchuri, V., Rengarajan, R., Shahidi, G., Steegen, A., Steen, M., Zafar, S., Zhang, Y. |
| المصدر: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :79-82 2004 |
| Relation: | 2004 International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386841 9780780386846 |
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| DOI: | 10.1109/IEDM.2004.1419071 |