مؤتمر
80nm self-aligned complementary I-MOS using double sidewall spacer and elevated drain structure and its applicability to amplifiers with high linearity
| العنوان: | 80nm self-aligned complementary I-MOS using double sidewall spacer and elevated drain structure and its applicability to amplifiers with high linearity |
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| المؤلفون: | Woo Young Choi, Jae Young Song, Byung Yong Choi, Jong Duk Lee, Young June Park, Byung-Gook Park |
| المصدر: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :203-206 2004 |
| Relation: | 2004 International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386841 9780780386846 |
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| DOI: | 10.1109/IEDM.2004.1419108 |