مؤتمر
Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scattering effect
| العنوان: | Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scattering effect |
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| المؤلفون: | Besling, W.F.A., Arnal, V., Guillaumond, J.R., Guedj, C., Broekaart, M., Chapelon, L.L., Farcy, A., Arnaud, L., Torres, J. |
| المصدر: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :325-328 2004 |
| Relation: | 2004 International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386841 9780780386846 |
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| DOI: | 10.1109/IEDM.2004.1419146 |