مؤتمر
Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm range
| العنوان: | Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm range |
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| المؤلفون: | Chung, S.S., Feng, H.J., Hsich, Y.S., Liu, A., Lin, W.M., Chen, D.F., Ho, J.H., Huang, K.T., Yang, C.L., Cheng, O., Sheng, Y.C., Wu, D.Y., Shiau, W.T., Chien, S.C., Kuan Liao, Sun, S.W. |
| المصدر: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :477-480 2004 |
| Relation: | 2004 International Electron Devices Meeting |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780386841 9780780386846 |
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| DOI: | 10.1109/IEDM.2004.1419193 |