A novel low cost 65nm CMOS process architecture with self aligned isolation and W cladded source/drain

التفاصيل البيبلوغرافية
العنوان: A novel low cost 65nm CMOS process architecture with self aligned isolation and W cladded source/drain
المؤلفون: Blosse, A., Ramkumar, K., Gopalan, P., Hsu, C.T., Narayanan, S., Narasimhan, G., Gettle, R., Kapre, R., Sharifzadeh, S.
المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :669-672 2004
Relation: 2004 International Electron Devices Meeting
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780386841
9780780386846
DOI:10.1109/IEDM.2004.1419256