MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures

التفاصيل البيبلوغرافية
العنوان: MSM varactor diodes based on AlGaN/GaN/SiC HEMT layer structures
المؤلفون: Marso, M., Bernat, J., Javorka, P., Fox, A., Wolter, M., Kordos, P.
المصدر: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on. :151-154 2004
Relation: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
DOI:10.1109/ASDAM.2004.1441182