Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE

التفاصيل البيبلوغرافية
العنوان: Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE
المؤلفون: Fastenau, J.M., Lubyshev, D., Fang, X.-M., Doss, C., Wu, Y., Liu, W.K., Bals, S., Griffith, Z., Kim, Y.-M., Rodwell, M.J.W.
المصدر: 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :346-349 2004
Relation: 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780385950
9780780385955
تدمد:10928669
DOI:10.1109/ICIPRM.2004.1442726