مؤتمر
Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE
العنوان: | Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE |
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المؤلفون: | Fastenau, J.M., Lubyshev, D., Fang, X.-M., Doss, C., Wu, Y., Liu, W.K., Bals, S., Griffith, Z., Kim, Y.-M., Rodwell, M.J.W. |
المصدر: | 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :346-349 2004 |
Relation: | 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780385950 9780780385955 |
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تدمد: | 10928669 |
DOI: | 10.1109/ICIPRM.2004.1442726 |