مؤتمر
A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
| العنوان: | A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices |
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| المؤلفون: | Chung, S.S., Liu, Y.R., Yeh, C.F., Wu, S.R., Lai, C.S., Chang, T.Y., Ho, J.H., Liu, C.Y., Huang, C.T., Tsai, C.T. |
| المصدر: | Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. VLSI Technology VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on. :86-87 2005 |
| Relation: | 2005 Symposium on VLSI Technology |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 4900784001 9784900784000 |
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| تدمد: | 07431562 21589682 |
| DOI: | 10.1109/.2005.1469222 |