مؤتمر
The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory
| العنوان: | The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory |
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| المؤلفون: | Jaechul Om, Eunseok Choi, Sejun Kim, Heegee Lee, Yongwook Kim, Heehyun Chang, Sungji Park, Gihyun Bae |
| المصدر: | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :257-259 2005 |
| Relation: | 2005 IEEE International Reliability Physics Symposium. Proceedings 43rd Annual |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780388038 9780780388031 |
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| تدمد: | 15417026 19381891 |
| DOI: | 10.1109/RELPHY.2005.1493094 |