Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues

التفاصيل البيبلوغرافية
العنوان: Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues
المؤلفون: Hefyene, N., Anghel, C., Gillon, R., Ionescu, A.M.
المصدر: 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :551-554 2005
Relation: 2005 IEEE International Reliability Physics Symposium. Proceedings 43rd Annual
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780388038
9780780388031
تدمد:15417026
19381891
DOI:10.1109/RELPHY.2005.1493146