مؤتمر
Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues
العنوان: | Hot carrier degradation of lateral DMOS transistor capacitance and reliability issues |
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المؤلفون: | Hefyene, N., Anghel, C., Gillon, R., Ionescu, A.M. |
المصدر: | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :551-554 2005 |
Relation: | 2005 IEEE International Reliability Physics Symposium. Proceedings 43rd Annual |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780388038 9780780388031 |
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تدمد: | 15417026 19381891 |
DOI: | 10.1109/RELPHY.2005.1493146 |