دورية أكاديمية

Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements

التفاصيل البيبلوغرافية
العنوان: Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements
المؤلفون: Chiochia, V., Swartz, M., Bortoletto, D., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hormann, C., Dongwook Kim, Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D.A., Son, S., Speer, T.
المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 52(4):1067-1075 Aug, 2005
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:00189499
15581578
DOI:10.1109/TNS.2005.852748