Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films

التفاصيل البيبلوغرافية
العنوان:	Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films
المؤلفون:	Chikaki, S., Shimoyama, A., Yagi, R., Yoshino, T., Ono, T., Ishikawa, A., Fujii, N., Hata, N., Nakayama, T., Kohmura, K., Tanaka, H., Goto, T., Kawahara, J., Sonoda, Y., Matsuo, H., Seino, Y., Takada, S., Kunimi, N., Uchida, Y., Hishiya, S., Shishida, Y., Kinoshita, K., Kikkawa, T.
المصدر:	Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Interconnect technology Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International. :48-50 2005
Relation:	Proceedings of the IEEE 2005 International Interconnect Technology Conference
قاعدة البيانات:	IEEE Xplore Digital Library