مؤتمر
Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films
العنوان: | Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films |
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المؤلفون: | Chikaki, S., Shimoyama, A., Yagi, R., Yoshino, T., Ono, T., Ishikawa, A., Fujii, N., Hata, N., Nakayama, T., Kohmura, K., Tanaka, H., Goto, T., Kawahara, J., Sonoda, Y., Matsuo, H., Seino, Y., Takada, S., Kunimi, N., Uchida, Y., Hishiya, S., Shishida, Y., Kinoshita, K., Kikkawa, T. |
المصدر: | Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Interconnect technology Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International. :48-50 2005 |
Relation: | Proceedings of the IEEE 2005 International Interconnect Technology Conference |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 078038752X 9780780387522 |
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تدمد: | 2380632X 23806338 |
DOI: | 10.1109/IITC.2005.1499919 |