Recovery of plasma process induced damage in porous silica low-k films by organosiloxane vapor post annealing

التفاصيل البيبلوغرافية
العنوان: Recovery of plasma process induced damage in porous silica low-k films by organosiloxane vapor post annealing
المؤلفون: Ono, T., Kinoshita, K., Takahashi, H., Fuji, N., Kohmura, K., Sonoda, Y., Yagi, R., Shimoyama, M., Hata, N., Kikkawa, T.
المصدر: 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005. Integrated circuit design and technology Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on. :107-110 2005
Relation: 2005 International Conference on Integrated Circuit Design and Technology
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780390814
9780780390812
تدمد:23813555
DOI:10.1109/ICICDT.2005.1502603