مؤتمر
A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket
العنوان: | A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket |
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المؤلفون: | Guegan, G., Deleonibus, S., Tedesco, S., Dal'zotto, B., Heitzmann, M., Roussin, J.C., Martin, F., Caillat, C. |
المصدر: | 27th European Solid-State Device Research Conference Solid-State Device Research Conference, 1997. Proceeding of the 27th European. :244-247 1997 |
Relation: | 27th European Solid-State Device Research Conference |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 2863322214 9782863322215 |
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DOI: | 10.1109/ESSDERC.1997.194411 |