A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket

التفاصيل البيبلوغرافية
العنوان: A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket
المؤلفون: Guegan, G., Deleonibus, S., Tedesco, S., Dal'zotto, B., Heitzmann, M., Roussin, J.C., Martin, F., Caillat, C.
المصدر: 27th European Solid-State Device Research Conference Solid-State Device Research Conference, 1997. Proceeding of the 27th European. :244-247 1997
Relation: 27th European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:2863322214
9782863322215
DOI:10.1109/ESSDERC.1997.194411