Performance and Reliability of 70nm NMOSFETs with Indium Retrograde Doping Channels

التفاصيل البيبلوغرافية
العنوان: Performance and Reliability of 70nm NMOSFETs with Indium Retrograde Doping Channels
المؤلفون: Xiang, Q., Martin, D., Yu, B., Yeap, G.C.-F., Lin, M.-R.
المصدر: 29th European Solid-State Device Research Conference Solid-State Device Research Conference, 1999. Proceeding of the 29th European. 1:564-567 1999
Relation: 29th European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:2863322451
9782863322451