Gate and Source/Drain Engineering for 50 nm P-Channel MOSFET

التفاصيل البيبلوغرافية
العنوان: Gate and Source/Drain Engineering for 50 nm P-Channel MOSFET
المؤلفون: Guegan, G., Deleonibus, S., Bertrand, G., Souil, D., Rivallin, P., Tedesco, S., Mur, P., Holliger, P., Nier, M.E.
المصدر: 31st European Solid-State Device Research Conference Solid-State Device Research Conference, 2001. Proceeding of the 31st European. :171-174 2001
Relation: 31st European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:2914601018
9782914601016
DOI:10.1109/ESSDERC.2001.195228