Tunnel Oxide Optimization for Device Scaling down: Nitridation Impact on Stress Induced Leakage Current

التفاصيل البيبلوغرافية
العنوان: Tunnel Oxide Optimization for Device Scaling down: Nitridation Impact on Stress Induced Leakage Current
المؤلفون: Ghidini, G., Sebastiani, A., Brazzelli, D., Zonca, R.
المصدر: 31st European Solid-State Device Research Conference Solid-State Device Research Conference, 2001. Proceeding of the 31st European. :247-250 2001
Relation: 31st European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:2914601018
9782914601016
DOI:10.1109/ESSDERC.2001.195247