Design of 50nm MOSFETs with Biased Side-Gates

التفاصيل البيبلوغرافية
العنوان: Design of 50nm MOSFETs with Biased Side-Gates
المؤلفون: Byung Yong Choi, Woo Choi, Young Jin Choi, Jong Duk Lee, Byung-Gook Park
المصدر: 31st European Solid-State Device Research Conference Solid-State Device Research Conference, 2001. Proceeding of the 31st European. :287-290 2001
Relation: 31st European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:2914601018
9782914601016
DOI:10.1109/ESSDERC.2001.195257