دورية أكاديمية
A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
| العنوان: | A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET |
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| المؤلفون: | Fuchs, E., Dollfus, P., Le Carval, G., Barraud, S., Villanueva, D., Salvetti, F., Jaouen, H., Skotnicki, T. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 52(10):2280-2289 Oct, 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2005.856181 |