مؤتمر
A physical analysis of HV MOSFET capacitance behaviour
| العنوان: | A physical analysis of HV MOSFET capacitance behaviour |
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| المؤلفون: | Anghel, C., Chauhan, Y.S., Hefyene, N., Ionescu, A.M. |
| المصدر: | Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005. Industrial electronics Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on. 2:473-477 vol. 2 2005 |
| Relation: | Proceedings of the IEEE International Symposium on Industrial Electronics |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780387384 9780780387386 |
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| تدمد: | 21635137 21635145 |
| DOI: | 10.1109/ISIE.2005.1528963 |