دورية أكاديمية
Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric
العنوان: | Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric |
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المؤلفون: | Feng Zhu, Se Jong Rhee, Chang Yong Kang, Chang Hwan Choi, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Hyoung-Sub Kim, Tackwhi Lee, Ok, I., Lee, J.C. |
المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 26(12):876-878 Dec, 2005 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 07413106 15580563 |
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DOI: | 10.1109/LED.2005.859637 |