دورية أكاديمية

Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric

التفاصيل البيبلوغرافية
العنوان: Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric
المؤلفون: Feng Zhu, Se Jong Rhee, Chang Yong Kang, Chang Hwan Choi, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Hyoung-Sub Kim, Tackwhi Lee, Ok, I., Lee, J.C.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 26(12):876-878 Dec, 2005
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
تدمد:07413106
15580563
DOI:10.1109/LED.2005.859637