Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions

التفاصيل البيبلوغرافية
العنوان: Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions
المؤلفون: Dixit, A., Anil, K.G., Rooyackers, R., Kaiser, M., Weemaes, R., Ferain, I., De Keersgieter, A., Collaert, N., Surdeanu, R., Goodwin, M., Zimmerman, P., Loo, R., Caymax, M., Jurczak, M., Biesemans, S., De Meyer, K., Leys, F.
المصدر: Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :445-448 2005
Relation: Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780392035
9780780392038
تدمد:19308876
23786558
DOI:10.1109/ESSDER.2005.1546680