مؤتمر
Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions
العنوان: | Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions |
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المؤلفون: | Dixit, A., Anil, K.G., Rooyackers, R., Kaiser, M., Weemaes, R., Ferain, I., De Keersgieter, A., Collaert, N., Surdeanu, R., Goodwin, M., Zimmerman, P., Loo, R., Caymax, M., Jurczak, M., Biesemans, S., De Meyer, K., Leys, F. |
المصدر: | Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :445-448 2005 |
Relation: | Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780392035 9780780392038 |
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تدمد: | 19308876 23786558 |
DOI: | 10.1109/ESSDER.2005.1546680 |