مؤتمر
Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications
العنوان: | Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications |
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المؤلفون: | Sug Hun Hong, Jae Hyuck Jang, Tae Joo Park, Doo Seok Jeong, Miyoung Kim, Cheol Seong Hwang |
المصدر: | Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :517-520 2005 |
Relation: | Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780392035 9780780392038 |
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تدمد: | 19308876 23786558 |
DOI: | 10.1109/ESSDER.2005.1546698 |