مؤتمر
Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications
| العنوان: | Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications |
|---|---|
| المؤلفون: | Sug Hun Hong, Jae Hyuck Jang, Tae Joo Park, Doo Seok Jeong, Miyoung Kim, Cheol Seong Hwang |
| المصدر: | Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. Solid-State Device Research Conference Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European. :517-520 2005 |
| Relation: | Proceedings of ESSDERC 2005. 31st European Solid-State Device Research Conference |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder كن أول من يترك تعليقا!