مؤتمر
Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes
| العنوان: | Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes |
|---|---|
| المؤلفون: | Sawyer, S., Rumyantsev, S.L., Pala, N., Shur, M.S., Bilenko, Y., Gaska, R., Kosterin, P.V., Salzberg, B.M. |
| المصدر: | Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. High Performance Devices High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on. :78-83 2004 |
| Relation: | High Performance Devices. Proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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