Enhanced fmax and Low Base Resistance in SiGe HBT with Nickel Silicidation

التفاصيل البيبلوغرافية
العنوان: Enhanced fmax and Low Base Resistance in SiGe HBT with Nickel Silicidation
المؤلفون: Hyun-cheol Bae, Sang-Hoon Kim, Young-Joo Song, Sang-Heung Lee, Ja-Yol Lee, Jin-Young Kang
المصدر: Conference on Optoelectronic and Microelectronic Materials and Devices, 2004. Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on. :45-48 2004
Relation: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780388208
9780780388208
DOI:10.1109/COMMAD.2004.1577488