مؤتمر
High performance tantalum carbide metal gate stacks for nMOSFET application
| العنوان: | High performance tantalum carbide metal gate stacks for nMOSFET application |
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| المؤلفون: | Hou, Y.T., Yen, F.Y., Hsu, P.F., Chang, V.S., Lim, P.S., Hung, C.L., Yao, L.G., Jiang, J.C., Lin, H.J., Jin, Y., Jang, S.M., Tao, H.J., Chen, S.C., Liang, M.S. |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :31-34 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
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| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609258 |