مؤتمر
Demonstration of Ni fully germanosilicide as a pFET gate electrode candidate on HfSiON
| العنوان: | Demonstration of Ni fully germanosilicide as a pFET gate electrode candidate on HfSiON |
|---|---|
| المؤلفون: | Yu, H.Y., Singanamalla, R., Opsomer, K., Augendre, E., Simoen, E., Kittl, J.A., Kubicek, S., Severi, S., Shi, X.P., Brus, S., Zhao, C., de Marneffe, J.F., Locorotondo, S., Shamiryan, D., Van Dal, M., Veloso, A., Lauwers, A., Niwa, M., Maex, K., Meyer, K.D., Absil, P., Jurczak, M., Biesemans, S. |
| المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :638-641 2005 |
| Relation: | International Electron Devices Meeting 2005 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 078039268X 9780780392687 |
|---|---|
| تدمد: | 01631918 2156017X |
| DOI: | 10.1109/IEDM.2005.1609431 |