Fluctuation limits & scaling opportunities for CMOS SRAM cells

التفاصيل البيبلوغرافية
العنوان: Fluctuation limits & scaling opportunities for CMOS SRAM cells
المؤلفون: Bhavnagarwala, A., Kosonocky, S., Radens, C., Stawiasz, K., Mann, R., Qiuyi Ye, Chin, K.
المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :659-662 2005
Relation: International Electron Devices Meeting 2005
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078039268X
9780780392687
تدمد:01631918
2156017X
DOI:10.1109/IEDM.2005.1609437