مؤتمر
Fluctuation limits & scaling opportunities for CMOS SRAM cells
العنوان: | Fluctuation limits & scaling opportunities for CMOS SRAM cells |
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المؤلفون: | Bhavnagarwala, A., Kosonocky, S., Radens, C., Stawiasz, K., Mann, R., Qiuyi Ye, Chin, K. |
المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :659-662 2005 |
Relation: | International Electron Devices Meeting 2005 |
قاعدة البيانات: | IEEE Xplore Digital Library |
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