مؤتمر
Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm
العنوان: | Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm |
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المؤلفون: | Tsutsui, G., Saitoh, M., Saraya, T., Nagumo, T., Hiramoto, T. |
المصدر: | IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :729-732 2005 |
Relation: | International Electron Devices Meeting 2005 |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 078039268X 9780780392687 |
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تدمد: | 01631918 2156017X |
DOI: | 10.1109/IEDM.2005.1609456 |