Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm

التفاصيل البيبلوغرافية
العنوان: Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm
المؤلفون: Tsutsui, G., Saitoh, M., Saraya, T., Nagumo, T., Hiramoto, T.
المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :729-732 2005
Relation: International Electron Devices Meeting 2005
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078039268X
9780780392687
تدمد:01631918
2156017X
DOI:10.1109/IEDM.2005.1609456