Non-uniform degradation behavior across device width in RF power GaAs PHEMTs

التفاصيل البيبلوغرافية
العنوان: Non-uniform degradation behavior across device width in RF power GaAs PHEMTs
المؤلفون: Villanueva, A.A., del Alamo, J.A., Hisaka, T., Hayashi, K., Somerville, M.
المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :783-786 2005
Relation: International Electron Devices Meeting 2005
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078039268X
9780780392687
تدمد:01631918
2156017X
DOI:10.1109/IEDM.2005.1609471